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DMG7401SFG
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-30
±25
Units
V
V
Continuous Drain Current (Note 6) V GS = -10V
Steady
State
t<10s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
-9.8
-7.7
-13.5
-10.8
A
A
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current (Notes 7 & 8)
Repetitive Avalanche Energy (Notes 7 & 8) L = 1mH
I S
I DM
I AR
E AR
-3.0
-80
14
104
A
A
A
mJ
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T A = +25°C
T A = +70°C
Steady State
t<10s
T A = +25°C
T A = +70°C
Steady State
t<10s
P D
R θ JA
P D
R θ JA
R θ JC
T J, T STG
0.94
0.6
137
82
2.2
1.3
60
36
3.0
-55 to +150
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-30
—
—
—
—
—
—
-1
±10
V
μ A
μ A
V GS = 0V, I D = -250 μ A
V DS = -30V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V GS(th)
-1.7
—
-3.0
V
V DS = V GS , I D = -250 μ A
—
9
11
V GS = -20V, I D = -12A
Static Drain-Source On-Resistance
R DS (ON)
—
10
13
m ?
V GS = -10V, I D = -9A
—
17
25
V GS = -4.5V, I D = -5A
Forward Transfer Admittance
|Y fs |
—
21
—
S
V DS = -5V, I D = -10A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (V GS = 4.5V)
Total Gate Charge (V GS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
—
—
—
—
—
2246
352
294
5.1
20.5
41
7.6
8.0
11.3
15.4
38.0
22.0
2987
468
391
8.5
30
58
-
-
23
31
61
38
pF
pF
pF
?
nC
nC
nC
nC
ns
ns
ns
ns
V DS = -15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V DS = -15V, I D = -12A
V DD = -15V, V GS = -10V,
R L = 1.25 ? , R G = 3 ? ,
BODY DIODE CHARACTERISTICS
Diode Forward Voltage
Reverse Recovery Time (Note 9)
Reverse Recovery Charge (Note 9)
V SD
t rr
Q rr
—
—
—
-0.7
20
9.5
-1.0
31
18
V
ns
nC
V GS = 0V, I S = -1A
I S = -9.5A, dI/dt = 100A/ μ s
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I AR and E AR rating are based on low frequency and duty cycles to keep T J = +25°C
8. Short duration pulse test used to minimize self-heating effect
9. Guaranteed by design. Not subject to product testing
POWERDI is a registered trademark of Diodes Incorporated
DMG7401SFG
Document number: DS35623 Rev. 10 - 2
2 of 6
www.diodes.com
June 2013
? Diodes Incorporated
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